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參數(shù)資料
| 型號： | MLP2N06CL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | VOLTAGE CLAMPED CURRENT LIMITING MOSFET |
| 中文描述： | 2 A, 58 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 192K |
| 代理商： | MLP2N06CL |
1
Motorola TMOS Power MOSFET Transistor Device Data
SMARTDISCRETES
Internally Clamped, Current Limited
N–Channel Logic Level Power MOSFET
The MLP2N06CL is designed for applications that require a rugged power switching
device with short circuit protection that can be directly interfaced to a microcontrol unit
(MCU). Ideal applications include automotive fuel injector driver, incandescent lamp
driver or other applications where a high in–rush current or a shorted load condition could
occur.
This logic level power MOSFET features current limiting for short circuit protection,
integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping
for over–voltage protection and Sensefet technology for low on–resistance. No additional
gate series resistance is required when interfacing to the output of a MCU, but a 40 k
gate pulldown resistor is recommended to avoid a floating gate condition.
The internal Gate–Source and Gate–Drain clamps allow the device to be applied
without use of external transient suppression components. The Gate–Source clamp
protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The
Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs
with inductive loads. Their unique design provides voltage clamping that is essentially
independent of operating temperature.
The MLP2N06CL is fabricated using Motorola’s SMARTDISCRETES
technology which
combines the advantages of a power MOSFET output device with the on–chip protective
circuitry that can be obtained from a standard MOSFET process. This approach offers an
economical means of providing protection to power MOSFETs from harsh automotive and
industrial environments. SMARTDISCRETES
devices are specified over a wide tempera-
ture range from –50
°
C to 150
°
C.
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
ID
PD
ESD
Clamped
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Clamped
Vdc
±
10
Vdc
Drain Current — Continuous @ TC = 25
°
C
Total Power Dissipation @ TC = 25
°
C
Electrostatic Voltage
Self–limited
Adc
40
Watts
2.0
kV
Operating and Storage Temperature Range
TJ, Tstg
–50 to 150
°
C
THERMAL CHARACTERISTICS
Maximum Junction Temperature
TJ(max)
R
θ
JC
TL
150
°
C
Thermal Resistance – Junction to Case
3.12
°
C/W
Maximum Lead Temperature for Soldering Purposes,
1/8
″
from case for 5 sec.
260
°
C
DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
Single Pulse Drain–to–Source Avalanche Energy
(Starting TJ = 25
°
C, ID = 2.0 A, L = 40 mH)
EAS
80
mJ
SMARTDISCRETES is a trademark of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MLP2N06CL/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.4 OHMS
CASE 221A–06, Style 5
TO–220AB
G
D
S
D
G
S
R1
R2
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