參數(shù)資料
型號(hào)： ML4T645-S-512
元件分類(lèi)： 小信號(hào)晶體管
英文描述： X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 5/8頁(yè)
文件大小： 144K
代理商： ML4T645-S-512
Silicon Bipolar Low Noise Transistor
ML4T645-S-512
The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.
M/A-COM Ltd.
North America: Tel. (800) 366-2266
Asia/Pacific:
Tel. +85 2 2111 8088
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +85 2 2111 8087
Fax +44 (1344) 300-020
NOMINAL GAIN vs COLLECTOR CURRENT AT
F=1.5 Ghz and VCE = 8 VOLTS (MA4T64535)
NOMINAL NOISE FIGURE AND ASSOCIATED GAIN vs
FREQUENCY AT VCE = 8 VOLTS AND COLLECTOR
CURRENT = 7 mA (MA4T64535)
NOMINAL GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (MA4T64535)
NOMINAL DC CURRENT GAIN vs COLLECTOR CURRENT
AT VCE = 8 VOLTS (MA4T64535)
NOMINAL NOISE FIGURE AND ASSOCIATED GAIN vs
COLLECTOR CURRENT AT F = 1 Ghz AND VCE = 8 VOLTS
(MA4T64535)
NOMINAL OUTPUT POWER AT THE 1 dB COMPRESSION
POINT vs COLLECTOR CURRENT AT FREQUENCY = 1 AND
4 Ghz AND VCE = 8 VOLTS (MA4T64535)
MAG
GTU(MAX)
|S21E|
2
Associated Gain
Noise Figure
Associated Gain
Optimum Match for Noise Figure
50 OHM Noise Figure
P1dB at 1 GHz
P1dB at 4 GHz
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