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參數(shù)資料
| 型號： | ML4T645-S-512 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 144K |
| 代理商： | ML4T645-S-512 |
Silicon Bipolar Low Noise Transistor
ML4T645-S-512
The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.
M/A-COM Ltd.
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Electrical Measurements at Room Temperature d.c. and a.c. Parameters
MIL-STD-750
Test
Limits
No.
Characteristics
Symbol
Test Method
Conditions
Min
Max
Units
1
Collector - Base / Breakdown Voltage
VCBO
3001
IC = 500A
25
-
V
2
Emitter - Base
Breakdown Voltage
VEBO
3026
IE = 100A
IC = 0
1.5
-
V
3
Collector-Base cut- off
ICBO
3036
VCB = 8V
-
100
nA
Current
IE = 0
4
Emitter - Base
IEBO
3061
VEB = V
-
1
A
Cut-off Current
IC = 0
5
DC Forward Current
hFE
3076
IC = 7mA
30
250
-
Transfer ratio
VCE = 8V
6
Insertion Power Gain
|S21E|
2
See Figure 1
F = 1 GHz
10
dB
VCB = 8V
IC = 0
See Note 1
7
Noise Figure
NF
See Figure 1
F = 1 GHz
1.7
dB
VCB = 8V
IC = 0
See Note 1
Notes:
1. This test performed on a sample from the production run.
Electrical Measurements at High and Low Temperature, -55 to +150°C
MIL-STD-750
Test
Limits
No.
Characteristics
Symbol
Test Method
Conditions
Min
Max
Units
1
Collector-Base cut- off
ICBO
3036
VCB = 8V
-
10
A
Current
IE = 0
2
DC Forward Current
hFE
3076
IC = 7mA
30
250
-
Transfer ratio
VCE = 8V
See Note 1
Parameter Drift Values
Test
No.
Characteristics
Symbol
Change Limits
'
Conditions
1
Collector-Base cut- off
ICBO
±10nA or ±100%
VCB = 8V
Current
whichever is greater
IE = 0
2
Emitter - Base
IEBO
±10nA or ±100%
VEB = V
Cut-off Current
whichever is greater
IC = 0
3
DC Forward Current
hFE
±30%
IC = 7mA
Transfer ratio
VCE = 8V
See Note 1
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