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參數(shù)資料
| 型號(hào)： | ML4T645-S-512 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 144K |
| 代理商： | ML4T645-S-512 |
Preliminary Specification
The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.
M/A-COM Ltd.
North America: Tel. (800) 366-2266
Asia/Pacific:
Tel. +85 2 2111 8088
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +85 2 2111 8087
Fax +44 (1344) 300-020
High Reliability Semiconductor
Silicon Bipolar Low Noise Transistor
ML4T645-S-512
V1.00
Features
x f
T to 9 GHz
x Low Noise Figure
x Silicon Dioxide and Silicon Dioxide Passivation
x Space Qualified
Description
The ML4T645 is a NPN small signal silicon bipolar transistor, well
suited for use in preamplifier or driver stages to approximately 4 GHz
and oscillators to 10 GHz. These transistors are industry standard with
good associated gain and wide dynamic range and feature low noise
figure at high collector current.
The test tables shown on this data sheet are presented in the same
format as ESA/SCC 5010 detail specifications. These devices have
been tested and screened to ESA/SCC 5010 Level B, Lot Acceptance
Level 1, either by similarity with another device type or as required by
the project. A new wafer lot will normally require Lot Acceptance
Level 2 testing, repeat production (assembly) lots may only require
Level 3 testing.
ML 4T645 is also available in die form, SOT-23, SOT-143 and the
Micro-X case style.
M/A-COM can provide a broad range of Silicon Bipolar Transistors,
the Semiconductor Master Catalogue contains outline drawings for
alternative case styles as well as information on the following devices.
x 3V, Low Noise, Small Signal, Bipolar Transistors for Portable
(Battery Operated) RF Systems
x 6-12V, General Purpose, Small Signal, Bipolar Transistors
x Transistors in SOT-143, SOT-23, 508, 509, 510, 511, and 512 case
styles
x Darlington MMIC cascadable amplifiers.
ODS 512 Outline
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.065
0.075
1.65
1.91
B
—
0.050
—
1.27
C
0.016
0.024
0.41
0.61
D
0.036
0.044
0.91
1.12
E
0.002
0.006
0.05
0.15
F
0.230
0.280
5.84
7.11
Maximum Ratings (Tamb = 25°C)
No.
Characteristics
Symbol
Maximum Ratings
Units
Remarks
1.
Power Dissipation
PD
300
mW
See Note 1
2.
Collector - Base / Breakdown Voltage
VCBO
25
V
3.
Collector - Emitter / Breakdown Voltage
VEBO
1.5
V
4.
Collector - Emitter / Breakdown Voltage
ICEO
12
V
5.
Collector Current
IC
65
mA
6.
Operating Temperature
TOP
-55 to +125
°C
7.
Storage Temperature
TSTO
-55 to +150
°C
8.
Soldering Temperature
TSOL
230
°C
See note 2
Notes:
1.
Derate linearly to 0 mW from 25°C to 125°C
2.
For a duration of 5 seconds at a distance greater than 1.5 mm from the body.
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