參數(shù)資料
型號: MK20X128VMD100R
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA144
封裝: 13 X 13 MM, MAPBGA-144
文件頁數(shù): 26/74頁
文件大小: 1849K
代理商: MK20X128VMD100R
6.4.1.2 Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1blk256k
Read 1s Block execution time
256 KB data flash
1.4
ms
trd1sec2k
Read 1s Section execution time (flash sector)
40
μs
tpgmchk
Program Check execution time
35
μs
trdrsrc
Read Resource execution time
35
μs
tpgm4
Program Longword execution time
50
TBD
μs
tersblk256k
Erase Flash Block execution time
256 KB data flash
160
800
ms
tersscr
Erase Flash Sector execution time
20
100
ms
tpgmsec512
tpgmsec1k
tpgmsec2k
Program Section execution time
512 B flash
1 KB flash
2 KB flash
TBD
ms
trd1all
Read 1s All Blocks execution time
2.8
ms
trdonce
Read Once execution time
35
μs
tpgmonce
Program Once execution time
50
TBD
μs
tersall
Erase All Blocks execution time
320
1600
ms
tvfykey
Verify Backdoor Access Key execution time
35
μs
tpgmpart256k
Program Partition for EEPROM execution time
256 KB FlexNVM
175
TBD
ms
tsetram32k
tsetram256k
Set FlexRAM Function execution time:
32 KB EEPROM backup
256 KB EEPROM backup
TBD
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
100
TBD
μs
teewr8b32k
teewr8b64k
teewr8b128k
teewr8b256k
Byte-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
TBD
1.5
TBD
2.5
ms
Word-write to FlexRAM for EEPROM operation
Table continues on the next page...
Peripheral operating requirements and behaviors
K20 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
32
Preliminary
Freescale Semiconductor, Inc.
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