參數(shù)資料
型號(hào)： MJW16206
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： POWER TRANSISTORS
中文描述： 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
封裝： CASE 340K-01, 3 PIN
文件頁(yè)數(shù)： 7/10頁(yè)
文件大?。?/td> 342K
代理商： MJW16206
7
Motorola Bipolar Power Transistor Device Data
EMITTER–BASE TURN–OFF ENERGY
Typical techniques for driving horizontal outputs rely on a
pulse transformer to supply forward base current, and a
turn–off network that includes a series base inductor to limit
the rate of transition from forward to reverse drive. An alter-
nate drive scheme has been used to characterize the
SCANSWITCH series of devices (see Figure 15). This circuit
produces a ramp of base drive, eliminating the heavy over-
drive at the beginning of the collector current ramp and
underdrive just prior to turnoff produced by typical drive strat-
egies. This high performance drive has two additional impor-
tant advantages. First, the configuration of T1 allows LB to be
placed outside the path of forward base current making it un-
necessary to expend energy to reverse current flow as in a
series base inductor. Second, there is no base resistor to lim-
it forward base current and hence no power loss associated
with setting the value of the forward base current. The pro-
cess of generating the ramp stores rather than dissipates en-
ergy. Tailoring the amount of energy stored in T1 to the
amount of energy, EB(off), that is required to turn–off the out-
put transistor results in essentially lossless operation. [Note:
B+ and the primary inductance of T1 (LP) are chosen such
that 1/2 LP Ib2 = EB(off)].
+24 V
C1
100
μ
F
+
U2
MC7812
VI
VO
R13
1K
R3
250
7
VCC
OUT
R12
470
1 W
GND
R14
150
C7
110 pF
Q2
MJ11016
(IB)
R16
430
R1
1K
R5
1K
(IC)
Q5
MJ11016
C6
100
μ
F
+
LY
CY
VCE
R4
22
D2
SCANSWITCH
DAMPER
DIODE
LB
T1
D1
MUR110
U1
MC1391P
6
1
2
8
R6
1K
OSC
GND
%
C4
0.005
R7
2.7K
R8
9.1K
R9
470
C2
10
μ
F
+
MDC1000A
Q6
2N5401
C3
10
μ
F
+
3.9 V
Q3
MTP3055E
R17
120
R15
10K
C5
0.1
Q4 SCANSWITCH
HORIZ OUTPUT
TRANSISTOR
Figure 15. High Resolution Deflection Application Simulator
T1: FERROXCUBE POT CORE #1811P3C8
T1:
PRIMARY SEC. TURNS RATIO = 13:4
T1:
GAPPED FOR LP = 30
μ
H
LB = 0.5
μ
H
CY = 0.01
μ
F
LY = 13
μ
H
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參數(shù)描述
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MJW18020_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistors High Voltage Planar
MJW18020G 功能描述:兩極晶體管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJW21191 功能描述:兩極晶體管 - BJT 8A 150V 100W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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