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參數(shù)資料
| 型號(hào)： | MJW16110 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS |
| 中文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 414K |
| 代理商： | MJW16110 |
1
Motorola Bipolar Power Transistor Device Data
SWITCHMODE Bridge Series
. . . specifically designed for use in half bridge and full bridge off line converters.
Excellent Dynamic Saturation Characteristics
Rugged RBSOA Capability
Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V
Collector–Emitter Breakdown — V(BR)CES — 650 V
State–of–Art Bipolar Power Transistor Design
Fast Inductive Switching:
tfi = 25 ns (Typ) @ 100 C
tc = 50 ns (Typ) @ 100 C
tsv = 1
μ
s (Typ) @ 100 C
Ultrafast FBSOA Specified
100 C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
ICM
20
Base Current — Continuous
— Pulsed (1)
10
Adc
@ TC = 100 C
IB
100
54
THERMAL CHARACTERISTICS
Thermal Resistance —
for 5 Seconds
R
θ
JC
1
0.92
C/W
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16110/D
POWER TRANSISTORS
15 AMPERES
400 VOLTS
175 AND 135 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(FORMERLY TO–3)
MJ16110
CASE 340F–03
TO–247AE
MJW16110
REV 1
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| MJW16206 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 500V 12A 3-Pin(3+Tab) TO-247AE 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MJW18020 | 功能描述:兩極晶體管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW18020_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistors High Voltage Planar |
| MJW18020G | 功能描述:兩極晶體管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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