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參數(shù)資料
| 型號： | MJH6287 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS |
| 中文描述： | 20 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 209K |
| 代理商： | MJH6287 |
4
Motorola Bipolar Power Transistor Device Data
V
V
IB, BASE CURRENT (mA)
200
500
300
1000
2000
3000
NPN
PNP
1.0
0.8
2.0
5.0
2.2
1.8
2.6
2.4
3.0
10
2.0
30
2.8
1.0
1.6
50
100
IC = 15 A
Figure 9. DC Current Gain
0.2
20
3.0
1.0
0.5
5.0
10
0.3
2.0
7.0
20
h
TJ = 150
°
C
25
°
C
–55
°
C
VCE = 3.0 V
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Collector Saturation Region
Figure 11. “On” Voltages
1.2
1.4
300 500
1000
200
TJ = 25
°
C
IC = 10 A
IC = 5.0 A
0.1
IC, COLLECTOR CURRENT (AMPS)
2.0
1.5
V
3.0
2.5
1.0
0.5
0.2
0.5
5.0
0.3
1.0
0.7
3.0
30
TJ = 25
°
C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
7.0
2.0
10
20
150
1000
700
500
2000
3000
5000
0.2
3.0
1.0
0.5
5.0
10
0.3
2.0
7.0
h
TJ = 150
°
C
25
°
C
–55
°
C
VCE = 3.0 V
IC, COLLECTOR CURRENT (AMPS)
300
IB, BASE CURRENT (mA)
1.0
0.8
2.0
5.0
2.2
1.8
2.6
2.4
3.0
10
2.0
30
2.8
1.0
1.6
50
100
IC = 15 A
20
1.2
1.4
300 500
200
IC = 10 A
IC = 5.0 A
0.1
IC, COLLECTOR CURRENT (AMPS)
2.0
1.5
V
3.0
2.5
1.0
0.5
0.2
0.5
5.0
0.3
1.0
0.7
3.0
30
TJ = 25
°
C
VBE(sat) @ IC/IB = 250
VBE(on) @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
7.0
2.0
10
20
20
1000
0.7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJH62873601 | 制造商:LG Corporation 功能描述:SUPPORTER |
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