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參數(shù)資料
| 型號： | MJE702 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Monolithic Construction With Built-in Base- Emitter Resistors |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 256K |
| 代理商： | MJE702 |
2
Motorola Bipolar Power Transistor Device Data
(IC = 50 mAdc, IB = 0)
MJE702, MJE703, MJE802, MJE803
(VCE = 80 Vdc, IB = 0)
MJE702, MJE703, MJE802, MJE803
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0)
DC Current Gain (1)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, IB = 40 mAdc)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
MJE700,T, MJE702, MJE800,T, MJE802
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%.
80
—
ICBO
—
—
100
100
μ
Adc
hFE
—
All devices
100
—
MJE703, MJE803
—
2.8
MJE703, MJE803
—
—
2.5
2.5
1.0
—
—
0.04
0.2
2.0
0.1
0.06
0.4
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
t
μ
2.0
1.0
0.8
0.6
0.4
0.2
ts
Figure 2. Switching Times Test Circuit
tr
td @ VBE(off) = 0
PNP
NPN
4.0
0.6
t, TIME (ms)
1.0
0.7
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 2.50
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.3
0.03
0.02
0.1
0.5
0.2
0.02
Figure 4. Thermal Response (MJE700T, 800T Series)
APV2
+8.0 V
0
≈
6.0 k
SCOPE
VCC
RC
51
For td and tr, D1 id disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
25
μ
s
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
V1
APPROX
–12 V
TUT
RB
D1
≈
150
tf
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE702G | 功能描述:達林頓晶體管 4A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE702STU | 功能描述:達林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE702T | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W) |
| MJE703 | 功能描述:達林頓晶體管 4A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE703G | 功能描述:達林頓晶體管 4A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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