參數(shù)資料
型號(hào)： MJE5731
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： POWER TRANSISTORS PNP SILICON
中文描述： 1 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, CASE 221A-09, 3 PIN
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 190K
代理商： MJE5731
3
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base–Emitter Voltage
1.0
0.8
V
1.4
1.2
0.4
0
0.02 0.03
0.6
0.2
0.05
0.2
2.0
0.1
0.5
0.3
1.0
D
1.0
0
TC, CASE TEMPERATURE (
°
C)
0
50
175
0.8
0.6
0.4
0.2
75
100
125
Figure 4. Normalized Power Derating
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
VBE(sat) @ IC/IB = 5.0
TJ = – 55
°
C
25
°
C
150
°
C
25
150
10
5.0
Figure 5. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
2.0
0.5
0.01
30
100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
dc
500
μ
s
0.05
10
20
1.0 ms
200 300
500
1.0
0.2
50
0.1
0.02
TC = 25
°
C
100
μ
s
MJE5730
MJE5731
MJE5732
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 6. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
t, TIME (ms)
1.0
0.7
0.5
0.01
1 k
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 3.125
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
R
Figure 6. Thermal Response
0.1
0.03
0.02
0.02
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.02
0.01
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