參數(shù)資料
型號: MJE4342
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(16A,100-160V,125W)
中文描述: 功率晶體管(16A條,100 - 160V,功率為125)
文件頁數(shù): 6/6頁
文件大?。?/td> 197K
代理商: MJE4342
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MJE4342/D
相關(guān)PDF資料
PDF描述
MJE4343 POWER TRANSISTORS(16A,100-160V,125W)
MJE4352 POWER TRANSISTORS(16A,100-160V,125W)
MJE4353 POWER TRANSISTORS(16A,100-160V,125W)
MJE521 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE4343 功能描述:兩極晶體管 - BJT 16A 160V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE4343_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High?Voltage  High Power Transistors
MJE4343G 功能描述:兩極晶體管 - BJT 16A 160V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE4350 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors
MJE4351 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors