參數(shù)資料
型號: MJE521
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS
中文描述: 4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-225AA
文件頁數(shù): 1/4頁
文件大?。?/td> 128K
代理商: MJE521
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in general–purpose amplifier and switching circuits. Recom-
mended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
circuitry.
DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc
Complementary to PNP MJE371
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
VCB
VEB
IC
Value
40
Unit
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
4.0
Adc
Derate above 25 C
0.32
W/ C
(VCB = 30 Vdc, IE = 0)
Emitter–Base Cutoff Current
IEBO
100
μ
Adc
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE521/D
4 AMPERE
POWER TRANSISTOR
NPN SILICON
40 VOLTS
40 WATTS
CASE 77–08
REV 1
相關(guān)PDF資料
PDF描述
MJE521 SILICON NPN TRANSISTOR
MJE521 POWER TRANSISTOR NPN SILICON
MJE5731 1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
MJE5731A POWER TRANSISTORS PNP SILICON
MJE5731 POWER TRANSISTORS PNP SILICON
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE521 制造商:STMicroelectronics 功能描述:Bipolar Transistor
MJE521_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN TRANSISTOR
MJE521G 功能描述:兩極晶體管 - BJT 4A 40V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE52T 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
MJE53T 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor