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參數(shù)資料
| 型號： | MJE3055TJ69Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 36K |
| 代理商： | MJE3055TJ69Z |
2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE
3055T
NPN Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤300s, duty cycle≤2% Pulse
Symbol
Parameter
Value
Units
VCBO
Collector -Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
10
A
IB
Base Current
6
A
PC
Collector Dissipation (TC=25°C)
75
W
PC
Collector Dissipation (Ta=25°C)
0.6
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = 200mA, IB = 0
60
V
ICEO
Collector Cut-off Current
VCE = 30V, IB = 0
700
A
ICEX1
ICEX2
Collector Cut-off Current
VCE = 70V, VBE(off) = -1.5V
@ TC = 150°C
1
5
mA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
5
mA
hFE
*DC Current Gain
VCE = 4V, IC = 4A
VCE = 4V, IC = 10A
20
5
100
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 4A, IB = 0.4A
IC = 10A, IB = 3.3A
1.1
8
V
VBE (on)
*Base-Emitter On Voltage
VCE = 4V, IC = 4A
1.8
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA
2
MHz
MJE3055T
General Purpose and Switching Applications
DC Current Gain Specified to IC =10A
High Current Gain-Bandwidth Product : fT = 2MHz (Min.)
1.Base
2.Collector
3.Emitter
1
TO-220
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