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參數(shù)資料
| 型號： | MJE3055TG-TN3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 114K |
| 代理商： | MJE3055TG-TN3-R |
MJE3055T
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 2
www.unisonic.com.tw
QW-R203-011.C
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
70
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
TO-220
75
W
Total Power Dissipation
TO-251/TO-252
PD
20
W
Collector Current
IC
10
A
Base Current
IB
6
A
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=200mA
60
V
Collector-Base Breakdown Voltage
BVCBO
IC=10mA
70
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10mA
5
V
ICBO
VCB=70V
1
mA
ICEO
VCE=30V
700
μA
Collector Cut-off Current
ICEX
VCE=70V, VEB(OFF)=1.5V
1
mA
Emitter Cut-off Current
IEBO
VEB=5V
5
mA
VCE(SAT)1 IC=4A, IB=0.4A
1.1
V
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)2 IC=10A, IB=3.3A
8
V
Base-Emitter on Voltage
VBE(ON)
VCE=4V, IC=4A
1.8
V
hFE1
VCE=4V , IC=4A
20
100
DC Current Gain (Note)
hFE2
VCE=4V , IC=10A
5
Current Gain Bandwidth Product
fT
VCE=10V, IC=0.5A, f=1MHz
2
MHZ
Note: Pulse test: PW≤300μs, duty cycle
≤2% Pulse
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE3055TG-TM3-T | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| MJE3055T | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE2955T | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| MJE340 | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| MJE3440 | 0.3 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE3055TL-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE3055TL-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE3055TL-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE3055TL-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE3055T-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
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