參數(shù)資料
型號： MJE2955T
廠商： STMICROELECTRONICS
元件分類： 功率晶體管
英文描述： 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 59K
代理商： MJE2955T
MJE2955T
MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The MJE3055T is a silicon Epitaxial-Base NPN
transistor
in
Jedec
TO-220
package.
It
is
intended
for
power
switching
circuits
and
general-purpose amplifiers. The complementary
PNP type is MJE2955T.
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJE3055T
PNP
MJE2955T
VCEO
Collector-Emitter Voltage (IB = 0)
60
V
VCBO
Collector-Base Voltage (IE = 0)
70
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
10
A
IB
Base Current
6
A
Ptot
Total Power Dissipation at Tcase
≤ 25 oC
75
W
Tstg
Storage Temperature
-55 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/4
相關PDF資料
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MJE340 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR
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MJE340 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
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相關代理商/技術參數(shù)
參數(shù)描述
MJE2955T 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-220
MJE2955T_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJE2955TD127 制造商:Motorola Inc 功能描述:
MJE2955TG 功能描述:兩極晶體管 - BJT 10A 60V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE2955TG-TN3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
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