參數(shù)資料
型號: MJE3055T
廠商: STMICROELECTRONICS
元件分類: 功率晶體管
英文描述: 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 59K
代理商: MJE3055T
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
1.66
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 30 V
700
A
ICEX
Collector Cut-off
Current (VBE = 1.5V)
VCE = 70 V
Tcase = 150
oC
1
5
mA
ICBO
Collector Cut-off
Current (IE = 0)
VCBO = 70 V
Tcase = 150
oC
1
10
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEBO = 5 V
5
mA
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA
60
V
VCE(sat)
Collector-Emitter
Sustaining Voltage
IC = 4 A
IB = 0.4 A
IC = 10 A
IB = 3.3 A
1.1
8
V
VBE(on)
Base-Emitter on
Voltage
IC = 4 A
VCE = 4 V
1.8
V
hFE
DC Current Gain
IC = 4 A
VCE = 4 V
IC = 10 A
VCE = 4 V
20
5
70
fT
Transistor Frequency
IC = 500 mA
VCE = 10 V
f = 500 KHz
2
MHz
Pulsed: Pulse duration = 300s, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
MJE2955T / MJE3055T
2/4
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