- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄182424 > MJE210T (ON SEMICONDUCTOR) 5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225 PDF資料下載
參數(shù)資料
| 型號： | MJE210T |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225 |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MJE210T |
Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 12
1
Publication Order Number:
MJE200/D
MJE200 - NPN,
MJE210 - PNP
Preferred Device
Complementary Silicon
Power Plastic Transistors
These devices are designed for low voltage, low-power, high-gain
audio amplifier applications.
Features
Collector-Emitter Sustaining Voltage -
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain -
hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2.0 Adc
= 10 (Min) @ IC = 5.0 Adc
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product -
fT = 65 MHz (Min) @ IC
= 100 mAdc
Annular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB
Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCB
25
Vdc
Emitter-Base Voltage
VEB
8.0
Vdc
Collector Current
- Continuous
- Peak
IC
5.0
10
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
15
0.12
W
mW/
_C
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
1.5
0.012
W
mW/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
qJC
8.34
_C/W
Thermal Resistance,
Junction-to-Ambient
qJC
83.4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MJE200
TO-225
500 Units/Box
5.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS, 15 WATTS
http://onsemi.com
MJE200G
TO-225
(Pb-Free)
500 Units/Box
TO-225
CASE 77
STYLE 1
2 1
3
MARKING DIAGRAM
YWW
JE2x0G
Y
= Year
WW
= Work Week
JE2x0 = Device Code
x = 0 or 1
G
= Pb-Free Package
Preferred devices are recommended choices for future use
and best overall value.
MJE210
TO-225
500 Units/Box
MJE210G
TO-225
(Pb-Free)
500 Units/Box
MJE210T
TO-225
50 Units/Rail
MJE210TG
TO-225
(Pb-Free)
50 Units/Rail
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE253 | 4 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJE2955TJ69Z | 10000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-220 |
| MJE3055TJ69Z | 10000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-220 |
| MJE3439 | 0.3 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE371 | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE210TG | 功能描述:兩極晶體管 - BJT 5A 25V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE220 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE221 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE222 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE223 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:NPN SILICON POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。