參數(shù)資料
型號(hào)： MJE182
廠(chǎng)商： STMICROELECTRONICS
元件分類(lèi)： 功率晶體管
英文描述： 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC, TO-126, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 51K
代理商： MJE182
THERMAL DATA
Rthj-amb
Rthj-case
Thermal Resistance Junction-ambient
Max
Thermal Resistance Junction-case
Max
83.4
10
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = rated VCBO
Tcase = 150
oC
0.1
A
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 7 V
0.1
A
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
80
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IB = 50 mA
IC = 1.5 A
IB = 0.15 A
IC = 3 A
IB = 0.6 A
0.3
0.9
1.7
V
VBE(sat)
Base-Emitter on
Voltage
IC = 1.5 A
IB = 0.15 A
IC = 3 A
IB = 0.6 A
1.5
2
V
VBE
Base-Emitter on
Voltage
IC = 0.5 A
VCE = 1 V
1.2
V
hFE
DC Current Gain
IC = 0.1 A
VCE = 1 V
IC = 0.5 A
VCE = 1 V
IC = 1.5 A
VCE = 1 V
50
30
12
250
fT
Transistor Frequency
IC = 0.1 A
VCE = 10 V
f = 10 MHz
50
MHz
CCBO
Collector-base
Capacitance
VCB = 10 V
IE = 0
f = 0.1MHz
for MJE172
for MJE182
60
40
pF
Pulsed: Pulse duration = 300s, duty cycle ≤ 1.5%
For PNP type voltage and current values are negative.
MJE172 - MJE182
2/4
相關(guān)PDF資料
PDF描述
MJE182 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
MJE200 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126
MJE2360T 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE2361T 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE240LEADFREE 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE182 制造商:STMicroelectronics 功能描述:Bipolar Transistor
MJE18204 制造商:Rochester Electronics LLC 功能描述:- Bulk
MJE18206 制造商:Rochester Electronics LLC 功能描述:- Bulk
MJE182G 功能描述:兩極晶體管 - BJT 3A 80V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE182STU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*