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參數(shù)資料
| 型號(hào)： | MJE182 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | PLASTIC, TO-126, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | MJE182 |
MJE172
MJE182
COMPLEMENTARY SILICON POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The MJE172 (PNP type) and MJE182 (NPN type)
are
silicon
Epitaxial
Planar,
complementary
transistors in Jedec SOT-32 plastic package.
They are designed for low power audio amplifier
and
low
current,
high
speed
switching
applications.
For PNP type voltage and current values are negative.
INTERNAL SCHEMATIC DIAGRAM
September 2003
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJE182
PNP
MJE172
VCEO
Collector-Emitter Voltage (IB = 0)
80
V
VCBO
Collector-Base Voltage (IE = 0)
100
V
VEBO
Base-Emitter Voltage (IC = 0)
7
V
IC
Collector Current
3
A
ICM
Collector Peak Current (tp < 5 ms)
6
A
IB
Base Current
1
A
Ptot
Total Power Dissipation at Tcase
≤ 25 oC
12.5
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Total Power Dissipation at Tcase
≤ 25 oC
150
oC
1/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE182 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE200 | 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE2360T | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE2361T | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE240LEADFREE | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE182 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
| MJE18204 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJE18206 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJE182G | 功能描述:兩極晶體管 - BJT 3A 80V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE182STU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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