參數(shù)資料
型號(hào): MJD44H11
廠商: STMICROELECTRONICS
元件分類: 功率晶體管
英文描述: 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝: PLASTIC, DPAK-3
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 152K
代理商: MJD44H11
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
MJD44H11 / MJD45H11
3/5
相關(guān)PDF資料
PDF描述
MJD45H11 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252
MJD45H11T4 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252
MJD45H11-T1 8 A, 80 V, PNP, Si, POWER TRANSISTOR
MJD45H11I 8 A, 80 V, PNP, Si, POWER TRANSISTOR
MJD45H11-I 8 A, 80 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD44H11_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors
MJD44H11_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11-001 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2