參數(shù)資料
型號(hào)： MJD42-I
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 6 A, 100 V, PNP, Si, POWER TRANSISTOR
封裝： IPAK-3
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 308K
代理商： MJD42-I
MJD42/42C
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
LOW SPEED SWITCHING APPLICATIONS
DPAK FOR SURFACE MOUNT
APPLICATIONS
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I.PACK, “- I” Suffix)
Electrically Similar to Popular TIP42 and TIP42C
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (T
C =25
°C)
* Pulse Test: PW<300
s, Duty Cycle<2%
Characteristic
Symbol
Rating
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25
°C)
Collector Dissipation (TA=25
°C)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
-100
-5
-6
-10
-2
20
1.75
150
-65 ~ 150
V
A
W
°C
Characteristic
Symbol
Test Conditions
Min
Max
Unit
* Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter On Voltage
Current Gain Bandwidth Product
VCEO (sus)
ICEO
ICES
IEBO
hFE
VCE(sat)
VBE(on)
fT
IC = - 30mA, IB = 0
VCE = -60V, IB = 0
VCE = -100V, VBE = 0
VBE = -5V, IC = 0
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
IC = -6A, IB = -600mA
VCE = -6V, IC = -4A
VCE = -10V, IC = -500mA
f = 1MHz
-100
30
15
3
-50
-10
-0.5
75
-1.5
-2
V
A
mA
V
MHz
D-PAK
I-PAK
1
1. Base 2. Collector 3. Emitter
1999 Fairchild Semiconductor Corporation
Rev. B.1
相關(guān)PDF資料
PDF描述
MJD42C-I 6 A, 100 V, PNP, Si, POWER TRANSISTOR
MJD42CI 6 A, 100 V, PNP, Si, POWER TRANSISTOR
MJD44H11I 8 A, 80 V, NPN, Si, POWER TRANSISTOR
MJD44H11-I 8 A, 80 V, NPN, Si, POWER TRANSISTOR
MJD44H11 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD44 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44E3 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS
MJD44E3-1 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
MJD44E3T4 功能描述:達(dá)林頓晶體管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJD44E3T4G 功能描述:達(dá)林頓晶體管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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