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參數(shù)資料
| 型號(hào)： | MJD32C-I |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | MJD32C-I |
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MJD32C
PNP Epitaxial Silicon Transistor
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Contents
Features
Product status/pricing/packaging
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General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, "-I" Suffix)
Electrically Similar to Popular TIP32 and TIP32C
Datasheet
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Product
Product status
Pb-free Status Pricing*
Package type
Leads Packing method
Package Marking Convention**
MJD32CTF
Full Production
$0.364 TO-252(DPAK)
2
TAPE REEL
Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&4 (4-Digit Date Code)
Line 3: MJD32C
MJD32CTF_SBDD002A
Full Production
N/A TO-252(DPAK)
2
TAPE REEL
Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&4 (4-Digit Date Code)
Line 3: MJD32C
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please
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Product Folder - Fairchild P/N MJD32C - PNP Epitaxial Silicon Transistor
18-Aug-2007
mhtml:file://C:\TEMP\MJD32CTF_SBDD002A.mht
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PDF描述 |
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| MJD32BT4 | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD31BT4 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD32CT4-A | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD32CT4 | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD32TF | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-252 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD32CQ-13 | 功能描述:TRANS PNP 100V 3A TO252-3L 制造商:diodes incorporated 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:100V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:1.2V @ 375mA，3A 電流 - 集電極截止（最大值）:1μA 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:10 @ 3A，4V 功率 - 最大值:15W 頻率 - 躍遷:3MHz 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線 + 接片），SC-63 供應(yīng)商器件封裝:TO-252 標(biāo)準(zhǔn)包裝:1 |
| MJD32CRL | 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32CRLG | 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32CT4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32CT4 | 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR PNP -100V TO-252 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR, PNP, -100V, TO-252 |
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