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參數(shù)資料
| 型號： | MJD30 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | MJD30 |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD30/
30C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300ms, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: MJD30
: MJD30C
- 40
- 100
V
VCEO
Collector-Emitter Voltage
: MJD30
: MJD30C
- 40
- 100
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 1
A
ICP
Collector Current (Pulse)
- 3
A
IB
Base Current
- 4
A
PC
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25
°C)
1.56
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
*Collector-Emitter Sustaining Voltage
: MJD30
: MJD30C
IC = - 30mA, IB = 0
- 40
- 100
V
ICEO
Collector Cut-off Current
: MJD30
: MJD30C
VCE = - 40V, IB = 0
VCE = - 60V, IB = 0
- 50
A
ICES
Collector Cut-off Current
: MJD30
: MJD30C
VCE = - 40V, VBE = 0
VCE = 100V, VBE = 0
- 20
A
IEBO
Emitter Cut-off Current
VBE = - 5V, IC = 0
- 1
mA
hFE
* DC Current Gain
VCE = - 4V, IC = - 0.2A
VCE = - 4V, IC = - 1A
40
15
75
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 1A, IB = - 125mA
- 0.7
V
VBE(on)
* Base-Emitter ON Voltage
VCE = - 4A, IC = - 1A
- 1.3
V
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 200mA
3
MHz
MJD30/30C
General Purpose Amplifier
Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP30 and TIP30C
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
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| MJD30C | 1 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD30C-I | 1 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD30-I | 1 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJD31C-TP | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD31CT4-A | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD3055 | 功能描述:兩極晶體管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD3055-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
| MJD3055G | 功能描述:兩極晶體管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD3055T4 | 功能描述:兩極晶體管 - BJT NPN Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD3055T4G | 功能描述:兩極晶體管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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