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參數(shù)資料
| 型號： | MJD2955-I |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 175K |
| 代理商： | MJD2955-I |
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MJD2955
PNP Epitaxial Silicon Transistor
Features
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Contents
Features
Product status/pricing/packaging
Order Samples
Qualification Support
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, "-I" Suffix)
Electrically Similar to Popular MJE2955T
DC Current Gain Specified to 10A
High Current Gain - Bandwidth Product: fT=2MHz (Min.), IC=-
500mA
Datasheet
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datasheet
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Product
Product status
Pb-free Status
Pricing*
Package type
Leads
Packing method
Package Marking Convention**
MJD2955TF
Full Production
$0.306
TO-252(DPAK)
2
TAPE REEL
Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&4 (4-Digit Date Code)
Line 2: MJD Line 3: 2955
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please
contact a Fairchild distributor to obtain samples
Indicates product with Pb-free second-level interconnect. For more information click here.
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Page 1 of 2
Product Folder - Fairchild P/N MJD2955 - PNP Epitaxial Silicon Transistor
18-Aug-2007
mhtml:file://C:\TEMP\MJD2955TF.mht
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29C-T1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD3055-I | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD2955T4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD2955T4 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
| MJD2955T4G | 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD2955TF | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD29C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
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