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參數(shù)資料
| 型號： | MJD117-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | CASE 369-07, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MJD117-1 |
MJD112 MJD117
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
6.25
_C/W
Thermal Resistance, Junction to Ambient*
RθJA
71.4
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
100
—
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
—
20
Adc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
—
20
Adc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
—
2
mAdc
Collector–Cutoff Current (VCB = 80 Vdc, IE = 0)
ICBO
—
10
Adc
Emitter–Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
—
2
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
500
1000
200
—
12,000
—
—
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
—
2
3
Vdc
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
—
4
Vdc
Base–Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
—
2.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
25
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD117
MJD112
Cob
—
200
100
pF
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD117-T1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117I | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD122-1 | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD122-TP | POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD117-1G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD117-I | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| MJD117ITU | 功能描述:兩極晶體管 - BJT PNP Si Transistor Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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