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參數(shù)資料
| 型號： | MJD112 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 248K |
| 代理商： | MJD112 |
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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MJD112/MJD117
6/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD117 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD112 | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-T1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD112_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| MJD112_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor |
| MJD112_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power Darlington transistors |
| MJD112_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Power Transistors |
| MJD112-001 | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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