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參數(shù)資料
| 型號： | MJD112 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 248K |
| 代理商： | MJD112 |
MJD112
MJD117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
LOW BASE-DRIVE REQUIREMENTS
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s
ELECTRICAL SIMILAR TO TIP112 AND
TIP117
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD112 and MJD117 form complementary
PNP - NPN pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 7K
R2(typ) = 200
January 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Emitter Voltage (IE = 0)
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
2
A
ICM
Collector Peak Current (tp < 5 ms)
4
A
IB
Base Current
0.05
A
Ptot
Total Dissipation at Tc = 25
oC20
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
For PNP type voltage and current values are negative.
1
3
DPAK
TO-252
(Suffix "T4")
1/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD117 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD112 | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-T1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD112_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| MJD112_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor |
| MJD112_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power Darlington transistors |
| MJD112_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Power Transistors |
| MJD112-001 | 功能描述:達林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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