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參數(shù)資料
| 型號： | MJD112 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 248K |
| 代理商： | MJD112 |
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
6.25
100
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 100 V
VCB = 80 V
0.02
0.01
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 50 V
0.02
mA
ICEX
Collector Cut-off
Current
(VBE = -1.5V)
VCE = 80 V
Tc = 125
oC
0.01
0.5
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
2
mA
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA
100
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 2 A
IB = 8 mA
IC = 4 A
IB = 40 mA
2
3
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 4 A
IB = 40 mA
4
V
VBE(on)
Base-Emitter On
Voltage
IC = 2 A
VCE = 3 V
2.8
V
hFE
DC Current Gain
IC = 0.5 A
VCE = 3 V
IC = 2 A
VCE = 3 V
IC = 4 A
VCE = 3 V
500
1000
200
12000
Pulsed: Pulse duration = 300 s, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
Safe Operating Areas
Derating Curve
MJD112/MJD117
2/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD117 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD112 | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-T1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD112_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| MJD112_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor |
| MJD112_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power Darlington transistors |
| MJD112_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Power Transistors |
| MJD112-001 | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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