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參數(shù)資料
| 型號： | MJ10022 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 56/63頁 |
| 文件大?。?/td> | 441K |
| 代理商： | MJ10022 |
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MJ10022 MJ10023
3–477
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 13 and 14 are
specified for these devices under the test conditions shown.
I CM
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
5.0
10
20
50
1.0
10
1.0
0
VCEM, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
300
500
40
70
TC = 25°C
60
50
20
IC/IB ≥ 20
25
°C ≤ TJ ≤ 100°C
,PEAK
COLLECT
OR
CURRENT
(AMPS)
100
200
400
0.1
0.01
dc
I C
,COLLECT
OR
CURRENT
(AMPS)
200
400
700
30
10
0
10
s
(TURN–ON SWITCHING)
50
5.0
0.5
0.05
20
2.0
0.2
0.02
600
100
Figure 13. Maximum Forward Bias Safe
Operating Area
Figure 14. Maximum RBSOA, Reverse Bias
Safe Operating Area
80
TURN–OFF LOAD LINE
FOR MJ10023
THE LOCUS FOR
MJ10022 IS 50 V LESS
BONDING WIRE LTD
THERMAL LTD
SECOND BREAKDOWN LTD
MJ10022
MJ10023
2 V
≤ VBE(off) ≤ 8 V
RBE = 24
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 13 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25°C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 13 may be found at any case tem-
perature by using the appropriate curve on Figure 15.
TJ(pk) may be calculated from the data in Figure 12. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 14 gives the RBSOA character-
istics.
0
TC, CASE TEMPERATURE (°C)
40
80
120
40
0
100
POWER
DERA
TING
FACT
OR
(%)
80
60
20
200
SECOND BREAKDOWN
DERATING
160
THERMAL
DERATING
Figure 15. Power Derating
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10023 | 制造商:NTE Electronics 功能描述:TRANSISTOR 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:600; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10023 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
| MJ10024 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 20 Amp Darlington Transistors NPN |
| MJ10025 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 850V TO-3 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:850V; Power Dissipation Pd:250W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ1002F | 制造商:Ohmite Mfg Co 功能描述:Res Metal Film 10K Ohm 1% 1/8W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack |
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