參數(shù)資料
型號： MJ10022
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝： METAL, TO-3, 2 PIN
文件頁數(shù)： 34/63頁
文件大小： 441K
代理商： MJ10022
MJ10022 MJ10023
3–475
Motorola Bipolar Power Transistor Device Data
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
INPUT
CONDITIONS
CIRCUIT
V
ALUES
TEST
CIRCUITS
20
1
0
PW Varied to Attain
IC = 100 mA
TURN–ON TIME
IB1 adjusted to
obtain the forced
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
t1 Adjusted to
Obtain IC
t1 [
Lcoil (ICM)
VCC
t2 [
Lcoil (ICM)
Vclamp
Test Equipment
Scope — Tektronix
475 or Equivalent
RESISTIVE TEST CIRCUIT
2
IB1
1
2
5 V
INDUCTIVE TEST CIRCUIT
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7
Vclamp = VCEO(sus)
Lcoil = 180 H
Rcoil = 0.05
VCC = 20 V
VCC = 250 V
RL = 12.5
Pulse Width = 25
s
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
t1
ICM
tf Clamped
tf
t
Vclamp
t2
TIME
VCEM
OUTPUT WAVEFORMS
1
2
TUT
RL
VCC
Figure 7. Inductive Switching Measurements
Figure 8. Typical Peak Reverse Base Current
10
0
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
1.0
2.0
3.0
4.0
8.0
7.0
5.0
3.0
I B2(pk)
,BASE
CURRENT
(AMPS)
IC = 20 A
IB1 = 1 A
Vclamp = 250 V
TJ = 25°C
9.0
8.0
6.0
4.0
2.0
1.0
7.0
6.0
5.0
Figure 9. Typical Inductive Switching Times
2.0
0
VBE(off), BASE–EMITTER VOLTAGE (VOLTS)
0
1.0
2.0
3.0
4.0
8.0
1.0
0.75
0.5
ICM = 20 A
IB1 = 1 A
VCEM = 250 V
1.75
1.25
0.25
7.0
6.0
5.0
tsv @ 100°C
tsv @ 25°C
tc @ 100°C
tc @ 25°C
t,TIME
(
s)
tfi
trv
IC
VCE
90% IB1
ICM
VCEM
90% VCEM
90% ICM
10%
ICM
2% IC
IB
tsv
tti
tc
TIME
Vclamp
10% VCEM
1.5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ10023 制造商:NTE Electronics 功能描述:TRANSISTOR 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:600; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ10023 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3
MJ10024 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 20 Amp Darlington Transistors NPN
MJ10025 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 850V TO-3 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:850V; Power Dissipation Pd:250W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ1002F 制造商:Ohmite Mfg Co 功能描述:Res Metal Film 10K Ohm 1% 1/8W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack
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