參數(shù)資料
型號(hào)： MJ10022
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝： METAL, TO-3, 2 PIN
文件頁(yè)數(shù)： 12/63頁(yè)
文件大?。?/td> 441K
代理商： MJ10022
MJ10022 MJ10023
3–473
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
MJ10022
(IC = 100 mA, IB = 0)
MJ10023
VCEO(sus)
350
400
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
—
—
0.25
5.0
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 , TC = 100_C)
ICER
—
—
5.0
mAdc
Emitter Cutoff Current
(VEB = 2.0 V, IC = O)
IEBO
—
—
175
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 13
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 14
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 V)
hFE
50
—
600
—
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
(IC = 40 Adc, IB = 5.0 Adc)
(IC = 20 Adc, IB = 10 Adc, TC = 100_C)
VCE(sat)
—
—
2.2
5.0
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.2 Adc)
(IC = 20 Adc, IB = 1.2 Adc, TC = 100_C)
VBE(sat)
—
—
2.5
Vdc
Diode Forward Voltage
(IF = 20 Adc)
Vf
—
2.5
5.0
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
150
—
600
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
td
—
0.03
0.2
s
Rise Time
(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,
VBE( ff) =5 0V t = 50 s
tr
—
0.4
1.2
s
Storage Time
VBE(off) = 5.0 V, tp = 50 s,
Duty Cycle
v 2.0%)
ts
—
0.9
2.5
s
Fall Time
tf
—
0.3
0.9
s
Inductive Load, Clamped (Table 1)
Storage Time
(I
20 A V
250 V I
1 0 A
tsv
—
1.9
4.4
s
Crossover Time
(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 V, TC = 100_C)
tc
—
0.6
2.0
s
Fall Time
VBE(off) 5 V, TC 100 C)
tfi
—
0.3
—
s
Storage Time
(I
20 A V
250 V I
1 0 A
tsv
—
1.0
—
s
Crossover Time
(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 V, TC = 25_C)
tc
—
0.3
—
s
Fall Time
VBE(off) 5 V, TC 25 C)
tfi
—
0.15
—
s
(1) Pulse Test: PW = 300
s, Duty Cycle v 2%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ10023 制造商:NTE Electronics 功能描述:TRANSISTOR 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:600; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ10023 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3
MJ10024 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 20 Amp Darlington Transistors NPN
MJ10025 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 850V TO-3 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:850V; Power Dissipation Pd:250W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ1002F 制造商:Ohmite Mfg Co 功能描述:Res Metal Film 10K Ohm 1% 1/8W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack
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