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| 型號(hào)： | MIL-PRF-19500 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| 中文描述： | 半導(dǎo)體器件，晶體管，npn型，硅，低功耗類型2N2484，2N2484UA，2N2484UB 1月，JANTX，JANTXV，揚(yáng)斯，JANHC和JANKC |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | MIL-PRF-19500 |
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MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings.
P
T
V
CBO
V
EBO
V
CEO
I
C
T
J
and T
STG
R
θ
JA
R
θ
JC
Types
T
A
= +25
°
C
mW
V dc
V dc
V dc
mA dc
°
C
°
C/W
°
C/W
2N2484
2N2484UA
2N2484UB
(1) Derate linearly at 3.08 mW/
°
C above T
A
= +37.5
°
C
(2) Derate linearly at 4.76 mW/
°
C above T
A
= +63.5
°
C.
500 (1)
650 (2)
500 (1)
60
60
60
6
6
6
60
60
60
50
50
50
-65 to +200
-65 to +200
-65 to +200
325
210
325
146
160
146
1.4 Primary electrical characteristics.
h
fe
C
obo
|h
fe
|2
V
CE(sat)
(1)
Limits
V
CE
= 5 V dc
I
C
= 1 mA dc
f = 1 kHz
I
= 0
V
CB
= 5 V dc
100 kHz
≤
f
≤
1 MHz
I
C
= 500
μ
A dc
V
= 5 V dc
f = 30 MHz
I
C
= 1.0 mA dc
I
B
= 0.1 mA dc
Min
Max
(1) Pulsed (see 4.5.1).
250
900
pF
5.0
2.0
7.0
V dc
0.3
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 November 2000.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
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| MJB32B | PNP SILICON POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIL-PRF-19500/296 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:P-CHANNEL J-FET |
| MIL-PRF-19500/356 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:5 WATT GLASS ZENER DIODES |
| MIL-PRF-19500/564 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
| MIL-PRF-19500/592 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET SURFACE MOUNT(SMD-1) |
| MIL-PRF-19500/655 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
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