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參數(shù)資料
| 型號(hào)： | MJD117 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Silicon Darlington Transistor(PNP達(dá)林頓硅晶體管) |
| 中文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 438K |
| 代理商： | MJD117 |
2000 Fairchild Semiconductor International
Rev. A, February 2000
M
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
P
C
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
*Collector-Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
*DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Value
- 100
- 100
- 5
- 2
- 4
- 50
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
mA
W
W
°
C
°
C
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 50V, I
B
= 0
V
CB
= - 100V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 3V, V
EB
= - 0.5A
V
CE
= - 3V, V
EB
= - 2A
V
CE
= - 3V, I
C
= - 4A
I
C
= -2A, I
B
= - 8mA
I
C
= - 4A, I
B
= - 40mA
I
C
= - 4A, I
B
= - 40mA
V
CE
= - 3A, I
C
= - 2A
V
CE
= -10V, I
C
= - 0.75A
V
CB
= - 10V, I
E
= 0
f= 0.1MHz
Min.
- 100
Max.
Units
V
μ
A
μ
A
mA
- 20
- 20
- 2
500
1000
200
12K
V
CE
(sat)
*Collector-Emitter Saturation Voltage
- 2
- 3
- 4
- 2.8
V
V
V
V
V
BE
(sat)
V
BE
(on)
f
T
C
ob
*Base-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
25
MHz
pF
200
MJD117
D-PACK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I. PACK, “ - I “ Suffix)
Electrically Similar to Popular TIP117
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
Equivalent Circuit
B
E
C
R1
R2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD117-001 | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117-001G | 制造商:ON Semiconductor 功能描述:Trans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail |
| MJD117-1G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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