參數(shù)資料
型號(hào)： MIE-556L3U
廠商： Unity Opto Technology
英文描述： GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
中文描述： 發(fā)動(dòng)器的T 1 3 / 4包裝紅外發(fā)光二極管
文件頁數(shù)： 1/2頁
文件大?。?/td> 33K
代理商： MIE-556L3U
GaAlAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-556L3U
Description
Package Dimensions
The MIE-556L3U is infrared emitting diodes in
GaAlAs technology molded in pastel blue
transparent package.
Features
l
Suitable for DC and high pulse current operation
l
Standard T-1 3/4 (
φ
5mm) package
l
Peak wavelength
λ
p
= 880 nm
l
Good spectral matching to si-photodetector
l
Radiant angle : 50°
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
Peak Forward Current(300pps,10
μ
s pulse)
120
mW
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
11/18/2000
Unity Opto Technology Co., Ltd.
A
C
Unit: mm (inches)
2.54 NOM.
(.100)
7.62
(.300)
φ
5.05
(.200)
1.0
(.040)
0.50 TYP.
(.020)
23.40 MIN.
(.920)
1.00MIN.
(.040)
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 2
SEE NOTE 3
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
相關(guān)PDF資料
PDF描述
MIE-814A2 AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824A4 AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824H2 GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824L3 GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIM-0KM1AKF INFRARED RECEIVER MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MIE-814A2 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824A4 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824H2 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824L3 制造商:UOT 制造商全稱:Unity Opto Technology 功能描述:GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIEB100W1200TEH 功能描述:IGBT 模塊 Six Pack SPT IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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