參數(shù)資料
型號: MIE-814A2
廠商: Unity Opto Technology
英文描述: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
中文描述: 的AlGaAs /砷化鎵的T 1 3 / 4包裝紅外發(fā)光二極管
文件頁數(shù): 1/2頁
文件大?。?/td> 32K
代理商: MIE-814A2
AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
Package Dimensions
The MIE-814A2 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Features
l
High radiant power and high radiant intesity
l
Suitable for DC and high pulse current operation
l
Peak wavelength
λ
P
=940 nm
l
Good spectral matching to Si-Photodetector
Absolute Maximum Ratings
@ T
A
=25
o
C
Unit
Parameter
Maximum Rating
Power Dissipation
150
mW
Peak Forward Current
1
A
Continuous Forward Current
100
mA
Reverse Voltage
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
Unity Opto Technology Co., Ltd.
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Unit: mm ( inches )
2.54NOM.
(.100)
A
C
2.00- 0.50
(.079) (.020)
6.70±0.20
(.264±.008)
f
5.00±0.20
(.197±.008)
1.30 max
(.051)
28 typ
(1.102)
2.00
±
1.00
(.079±.039)
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