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| 型號： | MIC2585-2MBTS TR |
| 廠商： | Micrel Inc |
| 文件頁數(shù)： | 23/28頁 |
| 文件大?。?/td> | 273K |
| 描述： | IC CTRLR HOT SWAP DUAL 24-TSSOP |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 類型： | 熱交換控制器 |
| 應(yīng)用： | 通用 |
| 內(nèi)部開關(guān)： | 無 |
| 電源電壓： | 1 V ~ 13.2 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 24-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 24-TSSOP |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | MIC2585-2MBTSTR MIC2585-2MBTSTR-ND |
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March 2005
23
MIC2584/2585
MIC2584/2585
Micrel
the opposite direction. Here, the worst-case maximum cur-
rent is found using a 57.5mV trip voltage and a sense resistor
that is 3% low in value. The resulting equation is:
I
57.5mV
0.97 R
59.3mV
R
LOAD(CONT,MAX)
SENSE(NOM)
SENSE(NOM)
=
( )
(
)
=
(12)
As an example, if an output must carry a continuous 6A
without nuisance trips occurring, Equation 11
yields:
R
41.3mV
6A
m
SENSE(MAX)
=
=
&
6 88
.
. The next lowest
standard value is 6m&
.
At the other set of tolerance extremes
for the output in question,
I
59.3mV
6.0m
A
LOAD(CONT,MAX)
=
&
= 9 88
.
. Knowing this final da-
tum, we can determine the necessary wattage of the sense
resistor using P = I
2
R, where
I will be I
LOAD(CONT, MAX)
, and
R will be (0.97)(R
SENSE(NOM)
).
These numbers yield the
following: P
MAX
= (9.88A)
2
(5.82m&)
= 0.568W. In this ex-
ample, a 1W sense resistor is sufficient.
MOSFET Selection
Selecting the proper external MOSFET for use with the
MIC2584/85 involves three straightforward tasks:
" Choice of a MOSFET which meets minimum
voltage requirements.
" Selection of a device to handle the maximum
continuous current (steady-state thermal is-
sues).
" Verify the selected parts ability to withstand any
peak currents (transient thermal issues).
MOSFET Voltage Requirements
The first voltage requirement for the MOSFET is easily stated:
the drain-source breakdown voltage of the MOSFET must be
greater than V
IN(MAX)
. For instance, a 12V input may reason-
ably be expected to see high-frequency transients as high as
18V. Therefore, the drain-source breakdown voltage of the
MOSFET must be at least 19V. For ample safety margin and
standard availability, the closest minimum value will be 20V.
The second breakdown voltage criterion that must be met is a
bit subtler than simple drain-source breakdown voltage, but is
not hard to meet. In MIC2584/85 applications, the gate of the
external MOSFET is driven up to approximately 20V by the
internal output MOSFET (again, assuming 12V operation). At
the same time, if the output of the external MOSFET (its source)
is suddenly subjected to a short, the gate-source voltage will go
to (20V 0V) = 20V. This means that the external MOSFET
must be chosen to have a gate-source breakdown voltage of
20V or more, which is an available standard maximum value.
However, if operation is above 12V, the 20V gate-source
maximum will likely be exceeded. As a result, an external Zener
diode clamp should be used to prevent breakdown of the
external MOSFET when operating at voltages above 10V. A
Zener diode with 10V rating is recommended as shown in
Figure 12. At the present time, most power MOSFETs with a
20V gate-source voltage rating have a 30V drain-source break-
down rating or higher. As a general tip, choose surface-mount
devices with a drain-source rating of 30V as a starting point.
Finally, the external gate drive of the MIC2584/85 requires a
low-voltage logic level MOSFET when operating at voltages
lower than 3V. There are 2.5V logic level MOSFETs available.
See Table 5, "MOSFET and Sense Resistor Vendors" for
suggested manufacturers.
I
2
TX_/RX
I
1
V
DD
V
DD
CORE SUPPLY
(V
CC
)
OUTPUT
DRIVER
CIRCUIT
BLOCK
OUTPUT
DRIVER
CIRCUIT
BLOCK
Data In
OE
Data Out
External
Bus Control
I/O
Dual Supply DSP
Peripheral
CORE
I/O SUPPLY
(V
DD
)
Data In
OE
Data Out
Figure 11. Bidirectional Port Bus Contention
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