參數(shù)資料
型號(hào): MHVIC910HNR2
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 921 MHz-960 MHz SiFET RF Integrated Power Amplifier
中文描述: 921兆赫,960兆赫場效應(yīng)管射頻集成功率放大器
文件頁數(shù): 7/12頁
文件大?。?/td> 333K
代理商: MHVIC910HNR2
MHVIC910HNR2
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 17. Two-Tone Broadband Performance
Figure 18. Two-Tone Broadband Performance
Figure 19. Two-Tone Broadband Performance
Figure 20. CW Performance @ 880 MHz
f, FREQUENCY (MHz)
Figure 21. CW Performance @ 880 MHz
Figure 22. CW Performance @ 880 MHz
P
in
, INPUT POWER (mW)
P
960
10
45
820
35
0
IRL
G
ps
η
IMD
V
DD
= 26 Vdc
P
out
= 10 W (PEP)
I
DQ total
= 200 mA
TwoTone Measurement, 100 kHz Tone Spacing
40
5
35
10
30
15
25
20
20
25
15
30
940
920
900
880
860
840
960
10
45
820
35
0
IRL
G
ps
η
IMD
V
DD
= 26 Vdc
P
out
= 10 W (PEP)
I
DQ total
= 200 mA
TwoTone Measurement, 100 kHz Tone Spacing
40
5
35
10
30
15
25
20
20
25
15
30
940
920
900
880
860
840
960
10
45
820
35
0
IRL
G
ps
η
IMD
40
5
35
10
30
15
25
20
20
25
15
30
940
920
900
880
860
840
TwoTone Measurement
100 kHz Tone Spacing
V
DD
= 26 Vdc
P
out
= 10 W (PEP), I
DQ total
= 200 mA
3.5
0
15
0
0
50
G
ps
η
V
DD
= 26 Vdc
I
DQ total
= 170 mA
f = 880 MHz
12
40
9
30
6
20
3
10
3
2.5
2
1.5
1
0.5
P
out
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
P
in
, INPUT POWER (mW)
P
in
, INPUT POWER (mW)
3.5
0
15
0
0
50
G
ps
η
V
DD
= 26 Vdc
I
DQ total
= 180 mA
f = 880 MHz
12
40
9
30
6
20
3
10
3
2.5
2
1.5
1
0.5
P
out
3.5
0
15
0
0
50
G
ps
η
V
DD
= 26 Vdc
I
DQ total
= 160 mA
f = 880 MHz
12
40
9
30
6
20
3
10
3
2.5
2
1.5
1
0.5
P
out
P
P
I
I
I
I
G
η
,
G
η
,
G
η
,
G
η
,
G
η
,
G
η
,
I
I
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