參數(shù)資料
型號: MHVIC910HNR2
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 921 MHz-960 MHz SiFET RF Integrated Power Amplifier
中文描述: 921兆赫,960兆赫場效應(yīng)管射頻集成功率放大器
文件頁數(shù): 2/12頁
文件大?。?/td> 333K
代理商: MHVIC910HNR2
2
RF Device Data
Freescale Semiconductor
MHVIC910HNR2
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
0 (Minimum)
Machine Model
M2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Recommended Operating Ranges
Parameter
Symbol
Value
Unit
Drain Supply Voltage
V
DD
26
Vdc
3rd Stage Quiescent Current
I
DQ3
150
mA
2nd Stage Quiescent Current
I
DQ2
50
mA
1st Stage Quiescent Current
I
DQ1
25
mA
Table 6. Electrical Characteristics
(T
A
= 25
°
C matched to a 50
Ω
system, unless otherwise noted)
V
DD
= 26 V, V
GS
set for I
DQ3
= 150 mA, frequency range 921-960 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
f
RF
921
960
MHz
Output Power @ 1 dB Compression Point
P @ 1dB
39
40
dBm
Power Gain @ P1dB
G @ 1dB
38
39
dB
Power Added Efficiency @ 1 dB Compression Point
PAE @ 1dB
43
48
%
Input Return Loss @ P1dB
IRL @ 1dB
-15
-10
dB
Gain Flatness @ 40 dBm
Variation (T
C
= -30 to +85
°
C @ 40 dBm)
G
F
G
V
.5
5
dB
dB
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