參數(shù)資料
型號(hào): MHVIC2114NR2
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifier
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 543K
代理商: MHVIC2114NR2
2
RF Device Data
Freescale Semiconductor
MHVIC2114NR2
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Input Power
P
in
5
dBm
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Driver Application
(P
out
= +0.2 W CW)
Stage 1, 27 Vdc, I
DQ1
= 96 mA
Stage 2, 27 Vdc, I
DQ2
= 204 mA
Stage 3, 27 Vdc, I
DQ3
= 111 mA
R
θ
JC
11.5
7.52
5.52
°
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
0 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W-CDMA Characteristics
(In Freescale Test Fixture, 50 ohm system) V
DD
= 27 Vdc, I
DQ1
= 96 mA, I
DQ2
= 204 mA, I
DQ3
= 111 mA,
P
out
= 23 dBm, 2110-2170 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel
Bandwidth @
±
5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
29
32
36
dB
Gain Flatness
G
F
0.3
0.5
dB
Input Return Loss
IRL
-13
-10
dB
Adjacent Channel Power Ratio
ACPR
-60
-57
dBc
Group Delay
Delay
1.7
ns
Phase Linearity
0.2
°
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