參數(shù)資料
型號(hào): MGFS45V2123
元件分類: 功率晶體管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封裝: HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 25K
代理商: MGFS45V2123
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
P1dB,GLP vs. Freq.
Frequency (GHz)
41
42
43
44
45
46
2.05
2.10
2.15
2.20
2.25
2.30
2.35
12
13
14
15
16
17
P1dB
GLP
VDS=10V
IDS=6.5A
Po,
ηadd vs. Pin
20
25
30
35
40
45
50
15
20
25
30
35
40
Input power Pin (dBm)
10
20
30
40
50
60
70
VDS=10V
IDS=6.5A
f=2.2GHz
Po
ηadd
Po,IM3 vs. Pin
28
30
32
34
36
38
40
15
17
19
21
23
25
27
29
Input power Pin (dBm S.C.L.)
-60
-50
-40
-30
-20
-10
0
VDS=10V
IDS=6.5A
f1=2.300GHz
f2=2.305GHz
Po
IM3
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
0.31
0.26
0.27
0.31
0.35
0.37
0.38
0.36
0.32
-34
-77
-120
-153
-178
161
143
126
107
4.76
4.96
5.02
4.99
4.88
4.79
4.69
4.62
4.56
148
129
109
90
73
56
39
22
5
0.031
0.032
0.035
0.034
0.035
0.036
0.037
123
99
76
53
31
17
-4
-22
-39
0.39
0.34
0.30
0.28
0.29
0.30
0.33
0.36
0.40
17
-2
-26
-51
-72
-92
-109
-123
-134
f
(GHz)
S-Parameter (TYP.)
S11
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
S21
S12
S22
S Parameters ( Tc=25C, VDS=10V, IDS=6.5A )
TYPICAL CHARACTERISTICS
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參數(shù)描述
MGFS45V2123A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
MGFS45V2123A_04 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFS45V2123A_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1-2.3 GHz BAND / 32W
MGFS45V2325 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
MGFS45V2325A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET