MITSUBISHI SEMICONDUCTOR <GaAs FET>

DESCRIPTION

OUTLINE

The MGFS48V2527 is a 60W push-pull type GaAs Power FET

especially designed for use in 2.5 - 2.7GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

Push-pull configuration

High output power

Pout = 60W (TYP.) @ f=2.5 - 2.7 GHz

High power gain

GLP = 10 dB (TYP.) @ f=2.5 - 2.7GHz

High power added efficiency

P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz

APPLICATION

2.5-2.7GHz band power amplifier

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS = 12 (V)

ID = 4.0 (A)

RG=20 (ohm) for each gate

ABSOLUTE MAXIMUM RATINGS

(Ta=25deg.C)

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

Symbol

Parameter

Ratings

Unit

making semiconductor products better and more reliable,

VGDO

Gate to drain voltage

-20

V

but there is always the possibility that trouble may occur

VGSO

Gate to source voltage

-10

V

with them.Trouble with semiconductors may lead to personal

PT *1

Total power dissipation

107.1

W

injury, fire or property damage. Remember to give due

Tch

Channel temperature

175

deg.C

consideration to safety when making your circuit designs,

Tstg

Storage temperature

-65 / +175

deg.C

with appropriate measures such as (1)placement of

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

*1 : Tc=25deg.C

ELECTRICAL CHARACTERISTICS

(Ta=25deg.C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

VGS(off)

Cut-off voltage

VDS = 3V , ID = 17.3mA

-1

-

-4

V

P2dB

Output power at 2dB gain

compression

47

48

-

dBm

GLP

Linear power gain

VDS=12V, ID(RF off)=4.0A, f=2.5 - 2.7GHz

9

10

-

dB

ID(RF)

Drain current

-

11

15

A

P.A.E.

Power added efficiency

-

45

-

%

Rth (Ch-C)

Thermal resistance

Channel to Case

-

1.0

1.4

deg.C/W

June-'04

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