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參數(shù)資料
| 型號： | MGFS45V2123 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | MGFS45V2123 |
MGFS45V2123
MITSUBISHI SEMICONDUCTOR <GaAs FET>
DESCRIPTION
The MGFS45V2123 is an internally impedance matched
GaAs power FET especially designed for use in 2.1~2.3
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
ELECTRICAL CHARACTERISTICS (Ta=25°C)
MITSUBISHI
ELECTRIC
%
*1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.1, 2.2, 2.3GHz,
f=5MHz
*2 : Channel to case
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Saturated drain current
VDS=3V, ID=60mA
V
Output power at 1dB gain
compression
45
dBm
Linear power gain
12
—
dB
Drain current
VDS=10V, ID(RF off)=6.5A, f=2.1~2.3GHz
7.5
A
ηadd
Power added efficiency
45
IM3
3rd order IM distortion
1.7
dBc
Rth (ch-c)
Thermal resistance
Vf method
—
°C/W
Forward gate current
76
mA
Parameter
Ratings
Unit
Gate to drain voltage
-15
V
-15
Gate to source voltage
22
Drain current
-61
A
Channel temperature
-65 ~ +175
°C
item 01 : 2.1~2.3GHz band power amplifier
item 51 : 2.1~2.3GHz band digital radio communication
APPLICATION
*2
ID
GLP
P1dB
VGS (off)
-45
11
-5
—
Limits
Storage temperature
Total power dissipation
IGF
Symbol
VGDO
VGSO
ID
Tch
Tstg
PT
IGR
Reverse gate current
175
88
W
mA
V
*1 : Tc=25°C
*1
—
-42
44
—
OUTLINE DRAWING
Until : millimeters (inches)
GF-38
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
Class A operation
FEATURES
High power gain
GLP=12dB (TYP.) @f=2.1~2.3GHz
High power added efficiency
ηadd=45% (TYP.) @f=2.1~2.3GHz
Loe distortion [item -51]
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
High output power
P1dB=30W (TYP.) @f=2.1~2.3GHz
Internally matched to 50 (
) system
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=6.5A
RG=25
*1
20.4±0.2 (0.803±0.008)
16.7 (0.658)
0.6±0.15
(0.024±0.006)
24±0.3 (0.945±0.012)
R1.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFS45V2123A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFS45V2123A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFS45V2123A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1-2.3 GHz BAND / 32W |
| MGFS45V2325 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET |
| MGFS45V2325A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET |
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