參數(shù)資料
型號(hào): MGFC36V5258
元件分類: 功率晶體管
英文描述: C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
封裝: HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 126K
代理商: MGFC36V5258
< C band internally matched power GaAs FET >
MGFC36V5258
5.2 – 5.8 GHz BAND / 4W
Publication Date : Apr., 2011
2
MGFC36V5258 TYPICAL CHARACTERISTICS( Ta=25deg.C )
MGFC36V5258 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )
S Parameters(Typ.)
S11
S21
S12
S22
f
(GHz)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
5.2
0.43
13
3.27
138
0.062
156
0.51
-17
5.3
0.30
-3
3.30
122
0.062
138
0.48
-28
5.4
0.19
-41
3.45
105
0.062
120
0.46
-39
5.5
0.18
-99
3.61
89
0.060
102
0.43
-51
5.6
0.28
-152
3.61
73
0.061
78
0.34
-66
5.7
0.39
179
3.45
55
0.059
56
0.26
-80
5.8
0.51
161
3.19
36
0.058
32
0.17
-98
P1dB,GLP vs. f
Po,PAE vs. Pin
S11,S22 vs. f
S21,S12 vs. f
相關(guān)PDF資料
PDF描述
MGFC36V5867 C BAND, GaAs, N-CHANNEL, RF POWER, JFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGFC36V5258_04 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V5258_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET
MGFC36V5867 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V5867_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET
MGFC36V5964A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET