型號(hào): | MGFC36V5258 |
元件分類: | 功率晶體管 |
英文描述: | C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
封裝: | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
文件頁數(shù): | 2/3頁 |
文件大?。?/td> | 126K |
代理商: | MGFC36V5258 |
相關(guān)PDF資料 |
PDF描述 |
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MGFC36V5867 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC36V6471-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC36V6471-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC36V7177-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC36V7177-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MGFC36V5258_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET |
MGFC36V5258_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC36V5867 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET |
MGFC36V5867_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC36V5964A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET |