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參數(shù)資料
| 型號： | MGFC36V5867 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 255K |
| 代理商： | MGFC36V5867 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V5867
5.8`6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC36V5867 device is an internally impedance-matched
GaAs power FET especially designed for use in 5.8 ` 6.75GHz
band amplifiers. The hermetically sealed metal-ceramic package
guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 36dBm (TYP.) @ f=5.8 ` 6.75 GHz
High power gain
GLP = 10 dB (TYP.) @ f=5.8 ` 6.75 GHz
APPLICATION
VSAT
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID=1.2(A)
RG=100 (ohm)
ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-15
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-15
V
with them. Trouble with semiconductors may lead to personal
ID
Drain current
A
injury, fire or property damage. Remember to give due
IGR
Revese gate current
mA
consideration to safety when making your circuit designs,
IGF
Forward gate current
mA
with appropriate measures such as (1)placement of
PT *1
Total power dissipation
25
W
substitutive, auxiliary circuits, (2)use of non-flammable
Tch
Channel temperature
175
deg.C
material or (3)prevention against any malfunction or mishap.
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS (Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
3.75
A
gm
Transconductance
VDS=3V,ID=1.1A
-
1
S
VGS(off) Pinch-off voltage
VDS=3V,ID=10mA
-
-4.5
V
P1dB
35.0
36.0
-
dBm
GLP
Linear power gain
VDS=10V,ID(RF off)=1.2A. f=5.8 ` 6.75GHz
8.5
10.0
-
dB
ID
Drain Current
-
1.8
A
P.A.E.
Power added efficiency
-
30
-
%
Rth(ch-c) Thermal resistance
*1
delta Vf method
-
5
6
deg.C/W
*1 : Channel-case
3.75
-10
21
Output power at 1dB gain
MITSUBISHI
ELECTRIC
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
4.5
+/-0.4
0.2
GF-8
1.6
2MIN
(2)
12.9
+/-0.2
2MIN
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0.1
2.6
+/-0.2
R-1.6
(3)
(2)
11.3
0.6 +/-0.15
Unit : millimeters
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC36V5867_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC36V5964A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V5964A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V5964A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC36V6472A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |
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