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參數(shù)資料
| 型號(hào)： | MGFC36V5867 |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | MGFC36V5867 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V5867
5.8`6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
MITSUBISHI
ELECTRIC
S parameters ( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )
S-Parameters (TYP.)
f
S11
S21
S12
S22
(GHz)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
5.80
0.48
155
3.409
-29
0.07
-76
0.33
179
5.90
0.47
136
3.426
-42
0.07
-91
0.29
164
6.00
0.46
116
3.472
-55
0.07
-104
0.26
147
6.10
0.44
98
3.494
-70
0.07
-117
0.24
132
6.20
0.42
79
3.465
-84
0.08
-132
0.21
114
6.30
0.40
60
3.446
-98
0.08
-145
0.20
96
6.40
0.39
39
3.397
-112
0.08
-157
0.19
77
6.50
0.37
17
3.356
-126
0.08
-172
0.18
57
6.60
0.37
-7
3.297
-141
0.08
173
0.18
34
6.70
0.38
-33
3.221
-156
0.08
161
0.18
12
6.80
0.41
-58
3.116
-171
0.08
146
0.19
-12
P1dB,GLP vs. f
31
32
33
34
35
36
37
38
39
40
5.6
5.8
6.0
6.2
6.4
6.6
6.8
7.0
FREQUENCY(GHz)
OUTPUT
POWER
P1dB(dBm)
7
8
9
10
11
12
13
14
15
16
LINEAR
POWER
GAIN
GLP(dB)
GLP
P1dB
VDS=10V
IDS=1.2A
相關(guān)PDF資料 |
PDF描述 |
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| MGFC36V6471-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC36V6471-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC36V7177-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC36V7177-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC36V5867_11 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC36V5964A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V5964A_04 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V5964A_11 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC36V6472A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |
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