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參數(shù)資料
| 型號(hào)： | MGFC36V5258 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | MGFC36V5258 |
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC36V5258
5.2 – 5.8 GHz BAND / 4W
DESCRIPTION
The MGFC36V5258 is an internally impedance-matched
GaAs power FET especially designed for use in 5.2 – 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=4W (TYP.) @f=5.2 – 5.8GHz
High power gain
GLP=10dB (TYP.) @f=5.2 – 5.8GHz
High power added efficiency
P.A.E.=32% (TYP.) @f=5.2 – 5.8GHz
APPLICATION
5.2 – 5.8 GHz band power amplifier
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.2A Refer to Bias Procedure RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain breakdown voltage
-15
V
VGSO
Gate to source breakdown voltage
-15
V
ID
Drain current
2.8
A
IGR
Reverse gate current
-10
mA
IGF
Forward gate current
21
mA
PT *1
Total power dissipation
25
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
*1 : Tc=25
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
2.0
2.8
A
gm
Transconductance
VDS=3V,ID=1.1A
-
1
-
S
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=10mA
-2
-3
-4
V
P1dB
Output power at 1dB gain compression
35
36
-
dBm
GLP
Linear Power Gain
9
10
-
dB
ID
Drain current
-
1.1
1.4
A
P.A.E.
Power added efficiency
VDS=10V,ID(RF off)=1.2A
f=5.2 – 5.8GHz
-
33
-
%
Rth(ch-c) *2
Thermal resistance
delta Vf method
-
6
C/W
*2 :Channel-case
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
4.
5
+
/-
0
.4
0.
2
GF-8
1.
6
2M
IN
(2)
12.9
+
/-
0
.2
2M
IN
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0.
1
2.
6
+
/-
0
.2
R-1 .6
(3)
(2)
11.
3
0.6 +/-0.15
Unit : millimeters
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC36V5258_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V5258_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC36V5867 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V5867_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC36V5964A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET |
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