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參數(shù)資料
| 型號(hào)： | MGF4953B |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 118K |
| 代理商： | MGF4953B |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(4/5)
N
ｏｖ
ｏｖ./2006
Nov./2006
S PARAMETERS
(VDS=2V,ID=10mA, Ta=25°C)
Freq.
S22
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
1
0.989
-13.0
4.537
165.8
0.014
78.9
0.637
-9.7
2
0.973
-25.9
4.502
152.9
0.028
71.8
0.629
-19.6
3
0.949
-38.7
4.472
140.4
0.041
62.7
0.621
-29.2
4
0.926
-52.0
4.460
127.3
0.054
53.2
0.608
-39.0
5
0.890
-64.9
4.431
114.9
0.066
44.4
0.592
-48.2
6
0.828
-81.1
4.394
99.8
0.076
33.4
0.539
-60.1
7
0.776
-95.6
4.311
86.3
0.085
24.1
0.505
-70.2
8
0.723
-110.6
4.230
73.2
0.093
15.2
0.469
-80.4
9
0.662
-126.6
4.094
59.9
0.099
5.4
0.423
-90.7
10
0.605
-142.6
3.943
47.4
0.102
-4.0
0.368
-100.2
11
0.551
-158.2
3.826
35.4
0.102
-12.9
0.318
-108.8
12
0.514
-174.5
3.740
23.7
0.100
-19.7
0.279
-116.3
13
0.488
167.0
3.622
11.2
0.099
-28.1
0.232
-126.2
14
0.486
149.0
3.572
-1.1
0.098
-32.1
0.203
-138.3
15
0.480
131.8
3.512
-12.6
0.094
-38.4
0.169
-148.1
16
0.509
113.0
3.425
-26.2
0.099
-43.0
0.148
-175.1
17
0.536
95.1
3.349
-39.1
0.099
-49.9
0.133
157.1
18
0.569
78.2
3.226
-52.1
0.100
-58.5
0.132
120.7
19
0.609
62.7
3.091
-66.1
0.099
-66.5
0.160
92.2
20
0.642
47.3
2.934
-79.2
0.096
-75.2
0.204
67.8
21
0.674
34.3
2.752
-91.8
0.091
-83.8
0.250
50.6
22
0.707
21.1
2.617
-104.8
0.089
-92.5
0.293
37.0
23
0.742
9.2
2.471
-117.4
0.082
-102.8
0.350
23.8
24
0.753
-2.2
2.307
-130.2
0.081
-111.9
0.390
13.5
25
0.775
-12.5
2.139
-142.4
0.072
-118.9
0.430
2.4
26
0.803
-22.5
2.008
-155.0
0.069
-135.9
0.474
-5.7
S11
S21
S12
NOISE PARAMETERS
(VDS=2V,ID=10mA, Ta=25°C)
Freq.
Rn
NFmin
(GHz)
(mag)
(ang)
(dB)
18
0.358
-137.2
0.12
0.51
20
0.372
-91.0
0.14
0.55
22
0.390
-47.7
0.63
0.77
24
0.417
-14.9
1.05
26
0.473
10.5
1.26
1.25
Γopt
Note) Rn is normalized by 50ohm
Reference Point
2.2mm
1.
0.65
1.0mm
4-φ0.4
Gate
Drain
HEMT mount
Board: εr=2.6
thickness=0.4mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF4961B | K BAND, Si, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4963BL | K BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGFC1403-A01 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGFC1403-A11 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGFC1403-A12 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF4953B_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
| MGF4954A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) |
| MGF4961B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
| MGF4963BL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
| MGF4964BL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
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