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參數(shù)資料
| 型號(hào)： | MGF4953B |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | MGF4953B |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(3/5)
N
ｏｖ
ｏｖ./2006
Nov./2006
TYPICAL CHARACTERISTICS
(Ta=25°C)
ID vs. VDS
0
10
20
30
40
50
0
1
2
3
Drain to Source voltage VDS(V)
D
ra
in
C
u
rr
e
n
t
ID
(m
A
)
Ta=25℃
VGS=-0.1V/STEP
ID VS. VGS
0
10
20
30
40
50
-1.00
-0.50
0.00
Gate to Source voltage VGS(V)
D
ra
in
C
u
rr
e
n
t
ID
(m
A
)
Ta=25
℃
VDS=2V
NF & Gs VS. ID
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
5
10
15
20
ドレイン電流 ID (mA)
雑
音
指
數(shù)
N
F
(d
B
)
4
5
6
7
8
9
10
11
12
13
雑
音
最
小
電
力
利
得
G
s
(d
B
)
Ta=25
℃
VDS=2V
f=20GHz
NF
Gs
D
R
A
IN
C
U
R
EN
T
ID
(m
A
)
DRAIN TO SOURCE VOLTAGE
VDS(V)
GATE TO SOURCE VOLTAGE
VGS(V)
D
R
A
IN
C
U
R
EN
T
ID
(m
A
)
DRAIN CURRENT
ID(mA)
A
S
O
C
IA
T
E
D
G
A
IN
G
s
(d
B
)
N
O
IS
E
F
IG
U
R
E
N
F
(d
B
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF4961B | K BAND, Si, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4963BL | K BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGFC1403-A01 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGFC1403-A11 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGFC1403-A12 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF4953B_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
| MGF4954A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) |
| MGF4961B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
| MGF4963BL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
| MGF4964BL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
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