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參數(shù)資料
| 型號： | MGF4953B |
| 元件分類： | 小信號晶體管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 118K |
| 代理商： | MGF4953B |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4953B
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(2/5)
N
ｏｖ
ｏｖ./2006
Nov./2006
Fig.1
Top
Side
Bottom
0.20±0.1
0.80±0.1
from "A" side view
(2.30)
(0.30)
+0.20
-0.10
2.15
+
0
.2
0
-
0
.1
0
2
.1
5
A
2-
0.5
0±
0.0
5
1.2
0±
0.0
5
2-R0.275
2-R0.20
2-
(1
.02
)
4-
0.
55
±
0.
05
2-
(2.2
0)
Square shape electrode is Drain
① Gate
② Source
③ Drain
J
5
Unit : mm
6 E G
①
②
③
①
②
③
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| MGF4961B | K BAND, Si, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF4953B_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
| MGF4954A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) |
| MGF4961B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
| MGF4963BL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
| MGF4964BL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Low Noise GaAs HEMT |
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