型號(hào): | MGF0952P |
元件分類: | 功率晶體管 |
英文描述: | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
封裝: | PLASTIC, LEADLESS PACKAGE-3 |
文件頁(yè)數(shù): | 5/6頁(yè) |
文件大?。?/td> | 56K |
代理商: | MGF0952P |
相關(guān)PDF資料 |
PDF描述 |
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MGF0953P | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
MGF1302 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
MGF1303B | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
MGF1323 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
MGFC45V2527 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MGF0952P_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
MGF0953P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
MGF0953P_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
MGF100-30 | 制造商:SMC Corporation of America 功能描述:CYL, GUIDE 100MM BORE |
MGF1302 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:LOW NOISE GaAs FET |